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Plasma Etching Systems are normally utilized for cleaning, descumming, stripping and etching where isotropic contours are acceptable. Reactive Ion Etching Systems are normally utilized for cleaning, descumming, stripping and etching where anisotropic (vertical side wall) contours are required. Barrel Ashing Systems are normally utilized for cleaning and descumming but are predominantly used for ashing (total removal) of resist off of entire boat loads of wafers at one time. Plasma Enhanced Chemical Vapor Deposition Systems- Plasma Enhanced Chemical Vapor Deposition Systems are normally utilized for depositing dielectric layers of Silicon Dioxide and Silicon Nitride on Substrates. Ion Milling Systems are utilized for removing materials by way of high velocity ion bombardment. Sputtering Systems are normally utilized for depositing metal conducting layers on substrates. |
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